作者:Su-Huai Wei
摘要:Nonradiative carrier recombination at a defect or impurity level can reduce the collection of photo-generated carriers and suppress luminescence.Therefore,understanding the underlying mechanism and providing an accurate theoretical prediction of the carrier capture rate(CCR)of a defect in a semiconductor are important for both semiconductor physics and device engineering[1-5].
发文机构:Beijing Computational Science Research Center
关键词:DEFECTPHONONRADIATIVE
分类号: O47[理学—半导体物理]