The 2-axis stress component decoupling of {100} c-Si by using oblique backscattering micro-Raman spectroscopy

作者：DongHui Fu,XiaoYong He,LuLu Ma,HuaDan Xing,Tian Meng,Ying Chang,Wei Qiu

摘要：With the application of strain engineering in microelectronics,complex stress states are introduced into advanced semiconductor devices.However,there is still a lack of effective metrology for the decoupling analysis of the complex stress states in semiconductor materials.This paper presents an investigation on the 2-axis stress component decoupling of{100}monocrystalline silicon(c-Si)by using oblique backscattering micro-Raman spectroscopy.A spectral-mechanical model was established,and two practicable methods for actual stress decoupling analyses were proposed.The verification experiments demonstrated the correctness and applicability of the methods proposed in this paper.

发文机构：Tianjin Key Laboratory of Modern Engineering Mechanics Department of Mechanical Engineering Department of Electrical and Computer Engineering

关键词：{100}c-Sistresscomponentdecouplingobliquebackscatteringmicro-Ramanspectroscopy

分类号： O657.37[理学—分析化学]TN30[理学—化学]