Chinese researchers develop high-performance integrated solid-state quantum memory
摘要：Chinese researchers have developed a high-fidelity integrated solid-state quantum memory,making important progress in the field of quantum storage and laying a solid foundation for developing a quantum network.The achievement was made by a team of researchers led by Li Chafing and Zhou Zongquan with the University of Science and Technology of China.It has been published in the journals Optica and Applied Physics Reviews.
关键词：QUANTUMSOLIDSTATE
分类号： O41[理学—理论物理]
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